Wykaz publikacji wybranego autora

Sebastian Głąb, mgr inż.

asystent

Wydział Informatyki, Elektroniki i Telekomunikacji
WIEiT-ke, *Katedra Elektroniki

Identyfikatory Autora

ORCID: brak

ResearcherID: brak

Scopus: 53881319200

1
  • Bandgap voltage reference and temperature sensor in novel SOI technology
2
  • Characterization of transistors fabricated in evolving lapis semiconductor silicon-on-insulator 0.2 $\mu$m technology
3
  • Compensation of the temperature fluctuations in the silicon photomultiplier measurement system
4
  • Design and simulations of the 10-bit SAR ADC in novel sub-micron technology 200 nm SOI CMOS
5
  • Development of pixel detector in novel sub-micron technology SOI CMOS 200 nm
6
  • Development of SOI pixel detector in Cracow
7
  • Digital library created to facilitate design of SOI detectors in Lapis Semiconductor 0.2 $\mu$m SOI technology
8
  • Four channels data acquisition system for silicon photomultipliers
9
  • Front-end electronics with fast signal shaper for Silicon Photomultipliers
10
  • Fully differential Charge to Time Converter and fast shaper readout circuit with gain compensation for SiPM
11
  • Low intensity fluorescence light measurements using silicon photomultiplier with dedicated front-end ASIC
12
  • Method of temperature fluctuations compensation in the silicon photomultiplier measurement system
13
  • Microflow measurements of antibodies fluorescence using Silicon Photomultipliers
14
  • Radiation damage in transistors fabricated with lapis semiconductor 200 nm FD-SOI technology
15
  • Reactive magnetron sputtering control system based on two-channel optical emission spectroscopy
16
  • Self-calibrating gain stabilization method for applications using silicon photomultipliers
17
  • Self-coincidence system for cosmic ray measurements using silicon photomultipliers
18
  • Silicon photomultiplier as fluorescence light detector
19
  • Silicon photomultiplier as fluorescence light detector
20
  • Synthetizable digital library created to facilitate design of SOI detectors in 200 nm SOI technology
21
  • Thermal compensation of silicon photomultiplier's gain in measurement system