Wykaz publikacji wybranego autora

Piotr Wiśniowski, dr hab. inż., prof. AGH

Wydział Informatyki, Elektroniki i Telekomunikacji
WIEiT-ke, Instytut Elektroniki

2023
[dyscyplina 1] dziedzina nauk inżynieryjno-technicznych / automatyka, elektronika, elektrotechnika i technologie kosmiczne
2018
[dyscyplina 1] dziedzina nauk inżynieryjno-technicznych / automatyka, elektronika i elektrotechnika

[poprzednia klasyfikacja] obszar nauk technicznych / dziedzina nauk technicznych / elektronika

Identyfikatory Autora	Informacje o Autorze w systemach zewnętrznych
ORCID: 0000-0002-7995-7416 ResearcherID: E-3288-2010 Scopus: 24462701800 PBN: 5e70922c878c28a047391227	OPI Nauka Polska System Informacyjny AGH (SkOs)

Identyfikatory Autora

Informacje o Autorze w systemach zewnętrznych

ORCID: 0000-0002-7995-7416 orcid iD

ResearcherID: E-3288-2010

Scopus: 24462701800

PBN: 5e70922c878c28a047391227

OPI Nauka Polska

System Informacyjny AGH (SkOs)

wydruk:

sortowanie:

1

1/f magnetic noise dependence on free layer thickness in hysteresis free MgO magnetic tunnel junctions
1/f magnetic noise dependence on free layer thickness in hysteresis free MgO magnetic tunnel junctions / P. WIŚNIOWSKI, J. M. Almeida, P. P. Freitas // IEEE Transactions on Magnetics ; ISSN 0018-9464. — 2008 vol. 44 no. 11, s. 2551–2553. — Bibliogr. s. 2553. — Afiliacja AGH potwierdzona na podstawie erraty zamieszczonej w: IEEE Transactions on Magnetics 2009 vol. 45 no. 5 s. 2176. — tekst: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4717649

2

1/f magnetic noise in MgO/CoFeB based sensors with voltage controlled perpendicular anisotropy
1/f magnetic noise in MgO/CoFeB based sensors with voltage controlled perpendicular anisotropy / P. WIŚNIOWSKI, M. DĄBEK, T. STOBIECKI, S. Cardoso, P. P. Freitas // W: MMM 58 [Dokument elektroniczny] : 58\textsuperscript{TH} annual conference on Magnetism and magnetic materials : 4–8 November 2013, Denver : abstracts. — Wersja do Windows. — Dane tekstowe. — [USA : s. n.], [2013]. — S. 255–256. — Wymagania systemowe: Adobe Reader. — Tryb dostępu: http://www.magnetism.org/MMM_58_Abstracts_reduced.pdf [2013-11-26]. — Bibliogr. s. 256

3

Bias voltage dependence of sensing characteristics in tunneling magnetoresistance sensors
Bias voltage dependence of sensing characteristics in tunneling magnetoresistance sensors / Piotr WIŚNIOWSKI, Maciej Nawrocki, Jerzy Wrona, Susana Cardoso, Paulo P. Freitas // Sensors [Dokument elektroniczny]. — Czasopismo elektroniczne ; ISSN 1424-8220. — 2021 vol. 21 iss. 7 art. no. 2495, s. 1–9. — Wymagania systemowe: Adobe Reader. — Bibliogr. s. 8–9, Abstr.. — Publikacja dostępna online od: 2021-04-03. — tekst: https://www.mdpi.com/1424-8220/21/7/2495/pdf

4

Bias voltage dependence of sensitivity in tunneling magnetoresistance sensors with voltage controlled magnetic anisotropy
Bias voltage dependence of sensitivity in tunneling magnetoresistance sensors with voltage controlled magnetic anisotropy / Ł. FUŚNIK, P. WIŚNIOWSKI, B. SZAFRANIAK, J. Wrona, S. Cardoso, P. P. Freitas // W: JEMS 2022 [Dokument elektroniczny] : the Joint European Magnetic Symposia : 24-29 July 2022, Warsaw, Poland : book of abstracts. — Wersja do Windows. — Dane tekstowe. — [Grenoble: The European Magnetism Association], [2022]. — S. 422. — Wymagania systemowe: Adobe Reader. — Tryb dostępu: https://www.dropbox.com/s/bgiqftnwdda1bik/JEMS2022-book-of-abstracts_25_07_2022%281%29.pdf?dl=0 [2022-08-31]. — Bibliogr. s. 422

5

Broadband microwave detector based on GMR-SV with varying interlayer exchange coupling
Broadband microwave detector based on GMR-SV with varying interlayer exchange coupling / Sławomir ZIĘTEK, Piotr OGRODNIK, Witold SKOWROŃSKI, Maciej CZAPKIEWICZ, Piotr WIŚNIOWSKI, Tomasz STOBIECKI, Józef Barnaś // W: MNE 2016 : 42\textsuperscript{nd} international conference on Micro and Nano Engineering : September 19–23, 2016, Vienna, Austria : final program. — [Vienna : s. n.], [2016]. — S. 149–150. — P. Ogrodnik – dod. afiliacja: Warsaw University of Technology

6

Controlling and modifying sensing properties of tunneling magnetoresistance sensors by voltage controlled magnetic anisotropy
Controlling and modifying sensing properties of tunneling magnetoresistance sensors by voltage controlled magnetic anisotropy / P. WIŚNIOWSKI, M. Nawrocki, M. DĄBEK // W: Spintronics XII : SPIE Nanoscience + Engineering : 11–15 August 2019, San Diego, California, United States / eds. Henri-Jean M. Drouhin, [et al.]. — Bellingham : SPIE, cop. 2019. — (Proceedings of SPIE / The International Society for Optical Engineering ; ISSN 0277-786X ; vol. 11090). — ISBN: 9781510628731 ; e-ISBN: 9781510628748. — S. 110903O-1–110903O-6. — Bibliogr. s. 110903O-6, Abstr.. — tekst: https://www-1spiedigitallibrary-1org-19ixtjqeq0072.wbg2.bg.agh.edu.pl/proceedings/Download?fullDOI=10.1117%2F12.2527538&downloadType=proceedings%20article&DOI=10.1117%2F12.2527538&isResultClick=True

7

Dependence of sensitivity, derivative of transfer curve and current on bias voltage magnitude and polarity in tunneling magnetoresistance sensors
Dependence of sensitivity, derivative of transfer curve and current on bias voltage magnitude and polarity in tunneling magnetoresistance sensors / Łukasz FUŚNIK, Bartłomiej SZAFRANIAK, Jerzy Wrona, Susana Cardoso, Paulo P. Freitas, Piotr WIŚNIOWSKI // Sensors [Dokument elektroniczny]. — Czasopismo elektroniczne ; ISSN 1424-8220. — 2023 vol. 23 iss. 3 art. no. 1214, s. 1–11. — Wymagania systemowe: Adobe Reader. — Bibliogr. s. 10–11, Abstr.. — Publikacja dostępna online od: 2023-01-20. — tekst: https://www.mdpi.com/1424-8220/23/3/1214/pdf?version=1674212500

8

Dynamic properties of MgO/CoFeB based sensors with perpendicular anisotropy
Dynamic properties of MgO/CoFeB based sensors with perpendicular anisotropy / M. DĄBEK, P. WIŚNIOWSKI // W: INTERMAG 2015 [Dokument elektroniczny] : IEEE International Magnetics Conference : May 11–15, 2015, Beijing, China / IEEE. — Wersja do Windows. — Dane tekstowe. — [Piscataway : IEEE], [2015]. — Dysk Flash. — e-ISBN: 978-1-4799-7321-7. — S. [1–2], poz. BT-10. — Wymagania systemowe: Adobe Reader. — Bibliogr. s. [2]

9

Dynamic response of tunneling magnetoresistance sensors to nanosecond current step
Dynamic response of tunneling magnetoresistance sensors to nanosecond current step / M. DĄBEK, P. WIŚNIOWSKI // Sensors and Actuators. A, Physical ; ISSN 0924-4247. — 2015 vol. 232, s. 148–150. — Bibliogr. s. 150, Abstr.. — tekst: http://www.sciencedirect.com/science/article/pii/S0924424715300170/pdfft?md5=d3c73aa68ef34f0dfdf98c6f06144aef&pid=1-s2.0-S0924424715300170-main.pdf

10

Effect of bias voltage on field detection of CoFeB/MgO/CoFeB sensors with low and high sensitivity
Effect of bias voltage on field detection of CoFeB/MgO/CoFeB sensors with low and high sensitivity / P. WIŚNIOWSKI, M. DĄBEK, T. STOBIECKI, J. Wrona // W: INTERMAG 2015 [Dokument elektroniczny] : IEEE International Magnetics Conference : May 11–15, 2015, Beijing, China / IEEE. — Wersja do Windows. — Dane tekstowe. — [Piscataway : IEEE], [2015]. — Dysk Flash. — e-ISBN: 978-1-4799-7321-7. — S. [1–2], poz. AI-10. — Wymagania systemowe: Adobe Reader. — Bibliogr. s. [2]. — J. Wrona – afiliacja: Singulus Technologies, Kahl am Main, Germany

11

Effect of bias voltage on sensitivity-bandwidth product of single and series connected tunneling magnetoresistance sensors
Effect of bias voltage on sensitivity-bandwidth product of single and series connected tunneling magnetoresistance sensors / M. DĄBEK, P. WIŚNIOWSKI, T. STOBIECKI, J. Wrona, S. Cardoso, P. P. Freitas // W: MMM 2016 [Dokument elektroniczny] : 61\textsuperscript{st} annual conference on Magnetism and Magnetic Materials : 31 October – 4 November 2016, New Orleans, Louisiana : abstracts. — Wersja do Windows. — Dane tekstowe. — [New Orleans : s. n.], [2016]. — S. 86–87. — Wymagania systemowe: Adobe Reader. — Tryb dostępu: http://magnetism.org/data_files/2016%20MMM%20Abstract%20Book%20FINAL.pdf [2017-01-05]. — Bibliogr. s. 86

12

Effect of buffer layer texture on the crystallization of $CoFeB$ and on the tunnel magnetoresistance in MgO based magnetic tunnel junctions
Effect of buffer layer texture on the crystallization of $CoFeB$ and on the tunnel magnetoresistance in MgO based magnetic tunnel junctions / J. Cao, J. KANAK, T. STOBIECKI, P. WIŚNIOWSKI, P. P. Freitas // IEEE Transactions on Magnetics ; ISSN 0018-9464. — 2009 vol. 45 no. 10, s. 3464–3466. — Bibliogr. s. 3466. — tekst: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5257200

13

Effect of $CoFeB$ electrode compositions on low frequency magnetic noise in tunneling magnetoresistance sensors
Effect of $CoFeB$ electrode compositions on low frequency magnetic noise in tunneling magnetoresistance sensors / P. WIŚNIOWSKI, M. DĄBEK, J. Wrona, S. Cardoso, P. P. Freitas // Journal of Applied Physics ; ISSN 0021-8979. — 2017 vol. 122 iss. 21 art. no. 213906, s. 213906-1–213906-4. — Bibliogr. s. 213906-4. — Publikacja dostępna online od: 2017-12-05. — tekst: http://aip-1scitation-1org-1pmaj4oud00a5.wbg2.bg.agh.edu.pl/doi/pdf/10.1063/1.5004249?class=pdf

14

Effect of electrode composition on low frequency magnetic noise in MgO/CoFeB sensors with perpendicular anisotropy
Effect of electrode composition on low frequency magnetic noise in MgO/CoFeB sensors with perpendicular anisotropy / P. WIŚNIOWSKI, M. DĄBEK, J. Wrona, T. STOBIECKI, S. Cardoso, P. Freitas // W: MMM 2014 [Dokument elektroniczny] : 59\textsuperscript{TH} annual conference on Magnetism and Magnetic Materials : 3–7 November 2014, Honolulu, Hawaii : abstracts. — Wersja do Windows. — Dane tekstowe. — [Hawaii : s. n.], [2014]. — S. 717. — Wymagania systemowe: Adobe Reader. — Tryb dostępu: http://www.magnetism.org/docs/abook/mmm_abstract_book_2014.pdf [2015-01-30]

15

Effect of MgO thickness and bias voltage polarity on frequency response of tunneling magnetoresistance sensors with perpendicular anisotropy
Effect of MgO thickness and bias voltage polarity on frequency response of tunneling magnetoresistance sensors with perpendicular anisotropy / M. DĄBEK, P. WIŚNIOWSKI, T. STOBIECKI, S. Cardoso, P. Freitas // W: MMM 2014 [Dokument elektroniczny] : 59\textsuperscript{TH} annual conference on Magnetism and Magnetic Materials : 3–7 November 2014, Honolulu, Hawaii : abstracts. — Wersja do Windows. — Dane tekstowe. — [Hawaii : s. n.], [2014]. — S. 184. — Wymagania systemowe: Adobe Reader. — Tryb dostępu: http://www.magnetism.org/docs/abook/mmm_abstract_book_2014.pdf [2015-01-30]

16

Effect of MgO thickness and bias voltage polarity on frequency response of tunneling magnetoresistance sensors with perpendicular anisotropy
Effect of MgO thickness and bias voltage polarity on frequency response of tunneling magnetoresistance sensors with perpendicular anisotropy / M. DĄBEK, P. WIŚNIOWSKI // Journal of Applied Physics ; ISSN 0021-8979. — 2015 vol. 117 iss. 17, s. 17A319-1–17A319-3. — Bibliogr. s. 17A319-3. — tekst: http://scitation.aip.org/deliver/fulltext/aip/journal/jap/117/17/1.4915104.pdf?itemId=/content/aip/journal/jap/117/17/10.1063/1.4915104&mimeType=pdf&containerItemId=content/aip/journal/jap

17

Effect of perpendicular anisotropy strength on low frequency magnetic noise and field detection in MgO/CoFeB based sensors
Effect of perpendicular anisotropy strength on low frequency magnetic noise and field detection in MgO/CoFeB based sensors / Piotr WIŚNIOWSKI, Michał DĄBEK, Jerzy WRONA, Tomasz STOBIECKI, Susana Cardoso, Paulo Freitas // W: INTERMAG Europe 2014 [Dokument elektroniczny] : IEEE International Magnetics Conference : Dresden, Germany, May 4–8, 2014 / IEEE. — Wersja do Windows. — Dane tekstowe. — [Piscataway : IEEE], [2014]. — Dysk Flash. — S. 1161–1162. — Wymagania systemowe: Adobe Reader. — Bibliogr. s. 1162. — Dostęp również online: {http://intermag2014.ifw-dresden.de/index.php?id=124=1=1=645} [2014-06-30]. J.Wrona – dod.afiliacja: Singulus Technologies AG, Kahl am Main, Germany

18

Electrode band structure effects in thin MgO magnetic tunnel junctions
Electrode band structure effects in thin MgO magnetic tunnel junctions / J. M. Teixeira, J. Ventura, M. P. Fernández-García, J. P. Araujo, J. B. Sousa, P. WIŚNIOWSKI, P. P. Freitas // Applied Physics Letters ; ISSN 0003-6951. — 2012 vol. 100 iss. 7, s. 072406-1–072406-3. — Bibliogr. s. 072406-3, Abstr.. — Publikacja dostępna online od: 2012-02-15. — P. Wiśniowski – dod. afiliacja: INESC-MN and IN-Institute of Nanoscience of Nanotechnology. — tekst: https://aip-1scitation-1org-1pmaj4olm0098.wbg2.bg.agh.edu.pl/doi/pdf/10.1063/1.3687200

19

Electrode band structure effects in thin MgO magnetic tunnel junctions
Electrode band structure effects in thin MgO magnetic tunnel junctions : poster / Teixeira José M., Ventura J., Fernandez-Garcia M. P., Araujo J. P., Sousa J. B., WIŚNIOWSKI P., Freitas P. P. // W: INTERMAG 2012 [Dokument elektroniczny] : IEEE International Magnetic Conference : May 7th to 11th 2012, Vancouver / IEEE. — Wersja do Windows. — Dane tekstowe. — [Piscataway : IEEE], [2012]. — Dysk Flash. — S. [1–3]. — Tryb dostępu: http://intermag.abstractcentral.com/s1aplanner/com.scholarone.s1aplanner.s1aplanner/S1APlanner.html?&CONFIG_ID=2371&USER_ID=1593989&ROLE_ID=14817&ROLE_TYPE_ID=17&PERSON2ROLE_ID=14196863&WORKFLOW_ID=17&CURRENT_PAGE=BROWSE_ [2012-06-08]. — Bibliogr. s. [1–2]. — Toż W: INTERMAG 2012 [Dokument elektroniczny] : IEEE International Magnetic Conference : May 7th to 11th 2012, Vancouver. — Wersja do Windows. — Dane tekstowe / IEEE. — [Piscataway : IEEE, 2012]. — Dane na dysku Flash. — S. [1–2], AP-02. — Wymagania systemowe: Adobe Acrobat Reader. — Tytuł przejęto z ekranu tyt. (po wybraniu opcji: data, AP-02). — Bibliogr. s. [1–2]. — Dod. afiliacja P. Wiśniowski: INESC-MN and IN-Institute of Nanoscience and Nanotechnology, Lisbon, Portugal

20

Electroforming, magnetic and resistive switching in $MgO-based$ tunnel junctions
Electroforming, magnetic and resistive switching in $MgO-based$ tunnel junctions / J. M. Teixeira, J. Ventura, R. Fermento, J. P. Araujo, J. B. Sousa, P. WIŚNIOWSKI, P. P. Freitas // Journal of Physics. D, Applied Physics ; ISSN 0022-3727. — 2009 vol. 42 iss. 10, s. 105407-1– 105407-4. — Bibliogr. s. 105407-4, Abstr.. — tekst: http://iopscience.iop.org/0022-3727/42/10/105407/pdf/d9_10_105407.pdf

21

Evidence of spin-polarized direct elastic tunneling and onset of superparamagnetism in MgO magnetic tunnel junctions
Evidence of spin-polarized direct elastic tunneling and onset of superparamagnetism in MgO magnetic tunnel junctions / J. M. Teixeira, J. Ventura, J. P. Araujo, J. B. Sousa, M. P. Fernández-García, P. WIŚNIOWSKI, P. P. Freitas // Physical Review. B, Condensed Matter and Materials Physics ; ISSN 1098-0121. — Tytuł poprz.: Physical Review B : Condensed Matter. — 2010 vol. 81, s. 134423-1–134423-8. — Bibliogr. s. 134423-7–134423-8. — P. WIŚNIOWSKI dod. afiliacja: INESC-MN. — tekst: http://journals.aps.org/prb/pdf/10.1103/PhysRevB.81.134423

22

Exchange biased CoFeB-MgO tunnel junctions at the onset of perpendicular anisotropy with in-plane/out-of-plane sensing capabilities
Exchange biased CoFeB-MgO tunnel junctions at the onset of perpendicular anisotropy with in-plane/out-of-plane sensing capabilities / J. M. Teixeira, J. Ventura, M. P. Fernández-García, J. P. Araujo, J. B. Sousa, P. WIŚNIOWSKI, D. C . Leitao, P. P. Freitas // Journal of Applied Physics ; ISSN 0021-8979. — 2012 vol. 111 iss. 5, s. 053930-1–053930-4. — Bibliogr. s. 053930-4. — tekst: http://scitation.aip.org/content/aip/journal/jap/111/5/10.1063/1.3693585

23

Exchange biased CoFeB-MgO tunnel junctions with perpendicular anisotropy
Exchange biased CoFeB-MgO tunnel junctions with perpendicular anisotropy : [abstrakt] / J. M. Teixeira, J. Ventura, D. C. Leitao, J. P. Araujo, J. B. Sousa, P. WIŚNIOWSKI, P. P. Freitas // W: INTERMAG 2011 [Dokument elektroniczny] : IEEE International Magnetics Conference : April 25–29, 2011, Taipei, Taiwan / IEEE Magnetics Society. — Wersja do Windows. — Dane tekstowe. — [Piscataway : IEEE], [2011]. — S. [1]. — Tryb dostępu: http://intermag.abstractcentral.com/planner?NEXT_PAGE=ITINERARY_ABS_DET_POP&SESSION_ABSTRACT_ID=780456&ABSTRACT_ID=1048777&SESSION_ID=81511&PROGRAM_ID=2901 [2011-05-24]. — Bibliogr. s. [1]

24

Exchange biased magnetic tunnel junctions with thin CoFeB electrodes for in-plane and out-of-plane magnetic field sensing
Exchange biased magnetic tunnel junctions with thin CoFeB electrodes for in-plane and out-of-plane magnetic field sensing / P. WIŚNIOWSKI, J. WRONA, W. SKOWROŃSKI, T. STOBIECKI, S. Cardoso, P. P. Freitas // W: The 1st CSIS international symposium on Spintronics-based VLSIs and the 7th RIEC international workshop on Spintronics : February 3rd and 4th, 2011, Sendai, Japan / Tohoku University. — [Sendai : TU], [2011]. — S. 34

25

Field noise in tunneling magnetoresistance sensors with variable sensitivity
Field noise in tunneling magnetoresistance sensors with variable sensitivity / P. WIŚNIOWSKI, M. DĄBEK, J. Wrona // Applied Physics Letters ; ISSN 0003-6951. — 2015 vol. 106 iss. 5 art. no. 052404, s. 052404-1–052404-4. — Bibliogr. s. 052404-4, Abstr.. — Publikacja dostępna online od: 2015-02-03. — tekst: https://aip-1scitation-1org-1pmaj4olm0098.wbg2.bg.agh.edu.pl/doi/pdf/10.1063/1.4907621

Bibiografia Publikacji Pracowników Akademii Górniczo-Hutniczej im. Stanisława Staszica w Krakowie

Wykaz publikacji wybranego autora

Piotr Wiśniowski, dr hab. inż., prof. AGH