Wykaz publikacji wybranego autora

Piotr Dorosz, dr inż.

adiunkt

Wydział Informatyki, Elektroniki i Telekomunikacji
WIEiT-ke, Instytut Elektroniki


  • 2023

    [dyscyplina 1] dziedzina nauk inżynieryjno-technicznych / automatyka, elektronika, elektrotechnika i technologie kosmiczne


  • 2018

    [dyscyplina 1] dziedzina nauk inżynieryjno-technicznych / automatyka, elektronika i elektrotechnika


[poprzednia klasyfikacja] obszar nauk technicznych / dziedzina nauk technicznych / elektronika


Identyfikatory Autora Informacje o Autorze w systemach zewnętrznych

ORCID: 0000-0002-8884-0981 orcid iD

ResearcherID: brak

Scopus: 53363376000

PBN: 5e7093e2878c28a0473b298d

OPI Nauka Polska

System Informacyjny AGH (SkOs)





Liczba pozycji spełniających powyższe kryteria selekcji: 87, z ogólnej liczby 87 publikacji Autora


1
  • A high-resolution pixel silicon Vertex Detector for open charm measurements with the NA61/SHINE spectrometer at the CERN SPS
2
  • A method for implementing a SHA256 hardware accelerator inside an Quantum True Random Number Generator (QTRNG)
3
  • A readout circuit dedicated for the detection of chemiluminescence using a silicon photomultiplier
4
  • A study of \emph {CP} violation $B^{\pm} \to DK^{\pm} and B^{\pm} \to D\pi^{\pm}$ decays with $D \to K^{0}_{S}K^{\pm}\pi^{\mp}$ final states
5
  • Analysis of the performance of photon detection methods using silicon photomultiplier in the application with high throughput requirements
6
7
  • Bandgap voltage reference and temperature sensor in novel SOI technology
8
  • Characterization of the 8-channel single-photon counting front-end chip for the upgrade of the LHCb RICH detectors
9
  • Characterization of transistors fabricated in evolving lapis semiconductor silicon-on-insulator 0.2 $\mu$m technology
10
  • CLARO: an ASIC for high rate single photon counting with multi-anode photomultipliers
11
  • Compensation of the temperature fluctuations in the silicon photomultiplier measurement system
12
  • Digital library created to facilitate design of SOI detectors in Lapis Semiconductor 0.2 $\mu$m SOI technology
13
  • Erratum to: Measurements of $\pi^{\pm}$, $K^{\pm}$, $p$ and $\bar{p}$ spectra in $^{7}Be+^{9}Be$ collisions at beam momenta from 19A to 150A GeV/c with the NA61/SHINE spectrometer at the CERN SPS
14
  • Erratum to: Measurements of $\pi^{−}production$ in $^{7}Be + ^9{Be}$ collisions at beam momenta from 19A to 150A GeV/c in the NA61/SHINE experiment at the CERN SPS
15
  • Erratum to: Measurements of $\Xi^{−}$ and $\bar{\Xi}^{+}$ production in proton–proton interactions at $\sqrt{s_{N N}}$ = 17.3 GeV in the NA61/SHINE experiment
16
  • Feasibility studies of conserved charge fluctuations in Au-Au collisions with CBM
17
  • Fluorescence detection in microfluidics systems
18
  • Four channels data acquisition system for silicon photomultipliers
19
  • Front-end electronics with fast signal shaper for Silicon Photomultipliers
20
  • Fully differential Charge to Time Converter and fast shaper readout circuit with gain compensation for SiPM
21
  • Gain compensation technique by bias correction in arrays of Silicon Photomultipliers using fully differential fast shaper
22
  • Hidden strangeness shines in NA61/SHINE
23
24
  • $K^{0}_{S}$ meson production in inelastic $p+p$ interactions at 158 GeV/c beam momentum measured by NA61/SHINE at the CERN SPS
25
  • $K*(892)^{0}$ meson production in inelastic p+p interactions at 158 GeV/c beam momentum measured by NA61/SHINE at the CERN SPS