Wykaz publikacji wybranego autora

Sebastian Głąb, mgr inż.

asystent

Wydział Informatyki, Elektroniki i Telekomunikacji
WIEiT-ke, Katedra Elektroniki


Identyfikatory Autora Informacje o Autorze w systemach zewnętrznych

ORCID: brak

ResearcherID: brak

Scopus: 53881319200

PBN: 909645

System Informacyjny AGH (SkOs)





Liczba pozycji spełniających powyższe kryteria selekcji: 29, z ogólnej liczby 29 publikacji Autora


1
  • Bandgap voltage reference and temperature sensor in novel SOI technology
2
  • Characterization of high resolution CMOS monolithic active pixel detector in SOI technology
3
  • Characterization of transistors fabricated in evolving lapis semiconductor silicon-on-insulator 0.2 $\mu$m technology
4
  • Compensation of the temperature fluctuations in the silicon photomultiplier measurement system
5
  • Design and simulations of the 10-bit SAR ADC in novel sub-micron technology 200 nm SOI CMOS
6
  • Development of pixel detector in novel sub-micron technology SOI CMOS 200 nm
7
  • Development of SOI pixel detector in Cracow
8
  • Digital library created to facilitate design of SOI detectors in Lapis Semiconductor 0.2 $\mu$m SOI technology
9
  • Fluorescence detection in microfluidics systems
10
  • Four channels data acquisition system for silicon photomultipliers
11
  • Front-end electronics with fast signal shaper for Silicon Photomultipliers
12
  • Fully differential Charge to Time Converter and fast shaper readout circuit with gain compensation for SiPM
13
  • Gain compensation technique by bias correction in arrays of Silicon Photomultipliers using fully differential fast shaper
14
  • Low intensity fluorescence light measurements using silicon photomultiplier with dedicated front-end ASIC
15
  • Method of signal detection from silicon photomultipliers using fully differential Charge to Time Converter and fast shaper
16
  • Method of temperature fluctuations compensation in the silicon photomultiplier measurement system
17
  • Microflow measurements of antibodies fluorescence using Silicon Photomultipliers
18
  • Prototype pixel detector in the SOI technology
19
  • Radiation damage in transistors fabricated with lapis semiconductor 200 nm FD-SOI technology
20
  • Reactive magnetron sputtering control system based on two-channel optical emission spectroscopy
21
22
  • Self-calibrating gain stabilization method for applications using silicon photomultipliers
23
  • Self-coincidence system for cosmic ray measurements using silicon photomultipliers
24
  • Silicon photomultiplier as fluorescence light detector
25
  • Silicon photomultiplier as fluorescence light detector