Wykaz publikacji wybranego autora

Witold Skowroński, dr hab. inż., prof. AGH

profesor nadzwyczajny

Wydział Informatyki, Elektroniki i Telekomunikacji
WIEiT-ke, Instytut Elektroniki


  • 2023

    [dyscyplina 1] dziedzina nauk inżynieryjno-technicznych / automatyka, elektronika, elektrotechnika i technologie kosmiczne

    [dyscyplina 2] dziedzina nauk ścisłych i przyrodniczych / nauki fizyczne (50%)


  • 2018

    [dyscyplina 1] dziedzina nauk inżynieryjno-technicznych / automatyka, elektronika i elektrotechnika

    [dyscyplina 2] dziedzina nauk ścisłych i przyrodniczych / nauki fizyczne (50%)


[poprzednia klasyfikacja] obszar nauk technicznych / dziedzina nauk technicznych / elektronika


Identyfikatory Autora Informacje o Autorze w systemach zewnętrznych

ORCID: 0000-0002-4568-2688 orcid iD

ResearcherID: C-2235-2013

Scopus: 36549232400

PBN: 5e7093ed878c28a0473b3692

OPI Nauka Polska

System Informacyjny AGH (SkOs)




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  • Buffer influence on magnetic dead layer, critical current and thermal stability in magnetic tunnel junctions with perpendicular magnetic anisotropy
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  • Influence of different buffers on magnetic dead layer, critical current and thermal stability in magnetic tunnel junctions with perpendicular magnetic anisotropy
5
  • Magnetic dead layers, magnetic anisotropy and Gilbert damping coefficient in $Co_{40}Fe_{40}B_{20}$ deposited on Ta/Ru/Ta
6
  • Magnetic field sensor based on magnetic tunnel junction with voltage-tunable magnetic anisotropy
7
  • Magnetic properties and magnetization dynamics of magnetic tunnel junctions bottom electrode with different buffer layers
8
  • Magnetic properties and magnetization dynamics of magnetic tunnel junctions bottom electrode with different buffer layers
9
  • Magnetic properties, structural analysis and magnetization dynamics of $CoFeB/MgO$ with different buffer layers
10
  • Magnetization dynamics of CoFeB magnetic tunnel junctions bottom electrode with different buffer layers
11
  • Micromagnetic modelling of voltage-induced spin-diode effect in magnetic tunnel junctions
12
  • Micromagnetic simulations of magnetization dynamics in magnetic tunnel junctions
13
  • Microwave detectors based on giant and tunelling magnetoresistive devices
14
  • Nanometer scale spintronic devices for microwave applications
15
  • Perpendicular magnetic anisotropy of $CoFeB/MgO$ bilayer deposited on different buffers tuned by electric fields
16
  • Perpendicular magnetic anisotropy of Ir/CoFeB/MgO trilayer system tuned by electric fields
17
  • Rectification of radio-frequency current in a giant-magnetoresistance spin valve
18
  • Spin diode effect in GMR strips with various interlayer coupling for broadband signals detection
19
  • The influence of interlayer exchange coupling in giant-magnetoresistive devices on spin diode effect in wide frequency range
20
  • Toward wafer scale inductive characterization of spin-transfer torque critical current density of magnetic tunnel junction stacks
21
  • Underlayer material dependence of perpendicular magnetic anisotropy in CoFeB/MgO tuned by electric fields
22
  • Underlayer material influence on electric-field controlled perpendicular magnetic anisotropy in CoFeB/MgO magnetic tunnel junctions
23
  • Voltage-control of magnetic anisotropy: what's the next target?