Wykaz publikacji wybranego autora

Witold Skowroński, dr hab. inż., prof. AGH

profesor nadzwyczajny

Wydział Informatyki, Elektroniki i Telekomunikacji
WIEiT-ke, Instytut Elektroniki

  • 2023

    [dyscyplina 1] dziedzina nauk inżynieryjno-technicznych / automatyka, elektronika, elektrotechnika i technologie kosmiczne

    [dyscyplina 2] dziedzina nauk ścisłych i przyrodniczych / nauki fizyczne (50%)

  • 2018

    [dyscyplina 1] dziedzina nauk inżynieryjno-technicznych / automatyka, elektronika i elektrotechnika

    [dyscyplina 2] dziedzina nauk ścisłych i przyrodniczych / nauki fizyczne (50%)

[poprzednia klasyfikacja] obszar nauk technicznych / dziedzina nauk technicznych / elektronika

Identyfikatory Autora Informacje o Autorze w systemach zewnętrznych

ORCID: 0000-0002-4568-2688 orcid iD

ResearcherID: C-2235-2013

Scopus: 36549232400

PBN: 5e7093ed878c28a0473b3692

OPI Nauka Polska

System Informacyjny AGH (SkOs)

1
  • Angular harmonic Hall voltage and magnetoresistance measurements of Pt/FeCoB and Pt-Ti/FeCoB bilayers for spin Hall conductivity determination
2
  • Application of spin transfer torque in magnetic tunnel junction
3
  • Backhopping effect in magnetic tunnel junctions: comparison between theory and experiment
4
5
  • Biaxial magnetic-field setup for angular-dependent measurements of magnetic thin films and spintronic nanodevices
6
7
  • cmtj: Simulation package for analysis of multilayer spintronic devices
8
  • Current-induced magnetization switching of exchange-biased NiO heterostructures characterized by spin-orbit torque
9
  • Determination of spin hall angle in heavy-metal/$Co-Fe-B$-based heterostructures with interfacial spin-orbit fields
10
  • Electric-field tunable spin diode FMR in patterned PMN-PT/NiFe structures
11
12
  • Field-free spin-orbit-torque switching in Co/Pt/Co multilayer with mixed magnetic anisotropies
13
  • High frequency voltage-induced ferromagnetic resonance in magnetic tunnel junctions
14
15
  • Influence of a composite free layer structure on thermal stability of perpendicular magnetic tunnel junction
16
  • Influence of intermixing at the Ta/CoFeB interface on spin Hall angle in Ta/CoFeB/MgO heterostructures
17
  • Influence of MgO tunnel barrier thickness on spin-transfer ferromagnetic resonance and torque in magnetic tunnel junctions
18
  • Insight into the structural and magnetotransport properties of epitaxial $\alpha-Fe_{2}O_{3}/Pt(111)$ heterostructures: role of the reversed layer sequence
19
20
  • Interlayer exchange coupling, dipolar coupling and magnetoresistance in Fe/MgO/Fe trilayers with a subnanometer MgO barrier
21
  • Large voltage-induced changes in the perpendicular magnetic anisotropy of an MgO-based tunnel junction with an ultrathin Fe layer
22
23
  • Magnetic field sensor based on magnetic tunnel junction with voltage-tunable magnetic anisotropy
24
  • Magnetic field sensor with voltage-tunable sensing properties
25
  • Magnetic properties and magnetization dynamics of magnetic tunnel junctions bottom electrode with different buffer layers