Wykaz publikacji wybranego autora

Maria Sapor, dr inż.

adiunkt

Wydział Informatyki, Elektroniki i Telekomunikacji
WIEiT-ke, Katedra Elektroniki


[poprzednia klasyfikacja] obszar nauk technicznych / dziedzina nauk technicznych / elektronika


Identyfikatory Autora Informacje o Autorze w systemach zewnętrznych

ORCID: brak

ResearcherID: brak

Scopus: 8716061500

PBN: 909821

OPI Nauka Polska

System Informacyjny AGH (SkOs)




Opisy publikacji wcześniejszych zobacz: bpp.agh.edu.pl/old.


Liczba pozycji spełniających powyższe kryteria selekcji: 61, z ogólnej liczby 61 publikacji Autora


1
  • A readout circuit dedicated for the detection of chemiluminescence using a silicon photomultiplier
2
  • Bandgap voltage reference and temperature sensor in novel SOI technology
3
  • Characterization of transistors fabricated in evolving lapis semiconductor silicon-on-insulator 0.2 $\mu$m technology
4
  • CMOS SOI technology characterization and verification of device models for analogue design
5
  • Compensation of the temperature fluctuations in the silicon photomultiplier measurement system
6
  • Data acquisition system for silicon ultra fast cameras for electron and gamma sources in medical applications
7
  • Design, fabrication and characterization of SOI pixel detectors of ionizing radiation
8
  • Development of a monolithic active pixel sensor using SOI technology with a thick device layer
9
  • Development of monolithic active pixel sensor in SOI technology fabricated on the wafer with thick device layer
10
  • Development of readout circuit for monolithic active pixel sensors in SOI technology
11
  • Four channels data acquisition system for silicon photomultipliers
12
  • Four channels data acquisition system for silicon photomultipliers
13
  • Front-end electronics for silicon photomultipliers implemented in CMOS VLSI
14
  • Front-end electronics for Silicon Photomultiplier detectors implemented in CMOS VLSI integrated circuit
15
  • Full-size monolithic active pixel sensors in SOI technology – design considerations, simulations and measurements results
16
  • Fully depleted monolithic active pixel sensor in SOI technology
17
  • Fully differential Charge to Time Converter and fast shaper readout circuit with gain compensation for SiPM
18
  • Gain compensation technique by bias correction in arrays of Silicon Photomultipliers using fully differential fast shaper
19
20
  • Laboratoryjny analizator protokołu sygnalizacyjnego DSS1
21
  • Low voltage charge-pump-based Sigma-Delta modulator using CMOS inverters as building blocks
22
  • Low voltage current feedback amplifier based on CMOS inverters suitable for deep submicron technology
23
  • Method of signal detection from silicon photomultipliers using fully differential Charge to Time Converter and fast shaper
24
  • Method of temperature fluctuations compensation in the silicon photomultiplier measurement system
25
  • Monolithic active pixel detector in SOI technology