Wykaz publikacji wybranego autora

Paweł Krewniak, mgr inż.

asystent

* Wydział Elektrotechniki, Automatyki, Informatyki i Elektroniki
WEAIiE-ke, Katedra Elektroniki


Identyfikatory Autora

ORCID: brak

ResearcherID: brak

Scopus: brak





Liczba pozycji spełniających powyższe kryteria selekcji: 29, z ogólnej liczby 29 publikacji Autora


1
  • Analiza i modelowanie heterostruktury fotowoltaicznej $a-Si:H/\mu c-Si:H/c-Si$
2
  • Assortment of technological terms for silicon-germanium thin films in gradient configuration
3
  • Chosen issues of construction of thin film photodiodes and transistors
4
  • Cienkowarstwowe cyfrowe detektory rentgentowskie
5
  • Consideration on wide bandgap amorphous and microcrystalline silicon for solar multijunction cell and X-ray sensor
6
  • Deposition, characterization and modeling of thin silicon tandem cell on glass and foil
7
  • Effectiveness of the n+/i and p+/i a-Si:H junctions applied in photovoltaic structures
8
  • Efficiency optimization of microcrystalline and amorphous silicon solar cells
9
  • Elektronika wielkich powierzchni
10
  • Fabrication, characterization and modeling of thin silicon tandem cell on foil in four terminal configuration
11
  • High efficient photovoltaics in Poland
12
  • Improvement in silicon thin film solar cell efficiency
13
  • Influence of double-side antireflection coatings and $ZnO/p^{+} a-Si:H/i a-Si:H$ film properties on $pin a-Si:H$ solar cells performance
14
  • Influence of low temperature crystallization of Si:H on tandem solar cell structure efficiency
15
  • Influence of $ZnO/p^{+}a-Si:H$ microcrystallization and antireflection coatings on pin $a-Si:H$ solar cells performance
16
  • Modeling of the amorphous-crystalline $a-Si:H/\mu c-Si:H/c-Si$ solar cell heterojunction structure
17
  • Modeling of top amorphous cell in four-terminal configuration with poly-silicon solar cell on the base of I-V-C and QE research
18
  • Optimization of amorphous/crystalline Si solar cell tandem structure
19
  • Properties of image sensor structure obtained below 120stC on the foil by reactive magnetron sputtering
20
  • Properties of image sensor structure TFT and pin photodiode obtained in low temperature
21
  • Properties of the $n^{+}/i$ and $p^{+}/i a-Si:H$ junctions and photovoltaic effectivenes of $p^{+}/i/\mu c-Si$ and $n^{+}/i/\mu c-Si$ structures
22
  • Silicon thin film multijunction solar cells
23
  • Technology of silicon-germanium thin films in gradient configuration
24
  • The automatical computation and evaluation of the solar cell parameters
25
  • Wide bandgap $≥$1.8eV amorphous silicon for solar multijunction cell and image sensor applications